Low threshold current density operation of GaInP-AlGaInP visible multiple quantum wire-like lasers (MQWR-LDs) under the room temperature pulsed condition
- 1 March 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (3), 241-243
- https://doi.org/10.1109/68.372733
Abstract
GaInP-AlGaInP multiple quantum wire-like layers were fabricated by the in situ strain induced lateral layer ordering process during MBE growth. According to TEM images, the quantum wire size was around 10 nm and quantum wire axis was along [011~] direction. When we made laser diodes with stripes along [011] direction, the low threshold current density, of 315 A/cm/sup 2/ was obtained. Anisotropic lasing characteristics between [011] and [011~] directions, in threshold current density, lasing mode, and lasing wavelength were observed.Keywords
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