Radiation-Induced Trivalent Silicon Defect Buildup at the Si-SiO2 Interface in MOS Structures
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6), 4105-4106
- https://doi.org/10.1109/tns.1981.4335683
Abstract
Electron spin resonance and capacitance versus voltage measurements demonstrate approximately a one-to-one correspondence between the density of radiation-induced trivalent silicon defects at the (111) Si-SiO2 interface and the density of radiation induced electronic interface states.Keywords
This publication has 16 references indexed in Scilit:
- The origin and nature of silicon band-gap states at the Si/SiO2 interfaceApplied Physics Letters, 1981
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- A model of interface states and charges at the Si-SiO2 interface: Its predictions and comparison with experimentsJournal of Applied Physics, 1981
- Theory of the electronic structure of the Si-SiinterfacePhysical Review B, 1980
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- INTERFACE STATES RESULTING FROM A HOLE FLUX INCIDENT ON ON THE SiO2/Si INTERFACEPublished by Elsevier BV ,1978
- THE DEFECT STRUCTURE OF THE Si-SiO2 INTERFACE, A MODEL BASED ON TRIVALENT SILICON AND ITS HYDROGEN “COMPOUNDS”Published by Elsevier BV ,1978
- Origin of Interface States and Oxide Charges Generated by Ionizing RadiationIEEE Transactions on Nuclear Science, 1976
- SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATINGApplied Physics Letters, 1968
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962