InAs quantum-dot lasers operating near 1.3 [micro sign]m with high characteristic temperature for continuous-wave operation
- 1 January 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (20), 1703-1704
- https://doi.org/10.1049/el:20001224
Abstract
A high characteristic temperature with To of 126 K under continuous-wave operation is obtained for an InAs/GaAs quantum dot laser. A triple-stacked active region with an energy separation of 95 meV between the ground and first excited radiative transitions is used to achieve a ground state saturation gain at 300 K of 13 cm-1, and high internal quantum efficiency of 74%.Keywords
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