Electronic states at the hydrogenated amorphous silicon/silcon nitride interface
- 1 October 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7), 769-771
- https://doi.org/10.1063/1.95398
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1983
- Anomalous surface photoconductivity in hydrogenated amorphous siliconSolid State Communications, 1983
- Measurements of depletion layers in hydrogenated amorphous siliconPhysical Review B, 1983
- Application of amorphous silicon field effect transistors in addressable liquid crystal display panelsApplied Physics A, 1981