Structure of Film Prepared by Low Energy Sputtering of Molybdenum

Abstract

Dependence of the structure and electrical resistivity of sputtered molybdenum films on residual gas pressure, ion energy, ion current density and substrate temperature are investigated in detail. Fcc structure is obtained when the residual gas pressure is high and the deposition rate is low. The film structure is bcc on substrates at 500°C, while the film of fcc structure does not transform to bcc when it is heated up to 700°C in vacuum. The lattice constant of fcc structure coincides with that of γ-Mo₂N obtained by reactive sputtering. From these results, it is concluded that the film of fcc structure is γ-Mo₂N.