Low-Temperature Annealing Studies in Ge
- 1 August 1959
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (8), 1269-1274
- https://doi.org/10.1063/1.1735304
Abstract
Irradiation at ∼10°K using 1.10 Mev electrons produces very different changes in the electrical properties of n‐type Ge as compared to those produced in p‐type Ge. In n‐type Ge, more carriers are removed per incident electron at 10°K than at 78°K. However about 50% of the removed carriers are recovered in two stages of annealing, at 34°K and 64°K, after low temperature irradiation.Irradiation at 0.315 Mev, after a 1.10 Mev irradiation, also produces recovery of about 50% of the carriers removed by the 1.10 Mev irradiation. In p‐type Ge, low temperature irradiation is at least 100 times less effective in removing carriers than is the case in n type. Annealing of an irradiated p‐type sample to 130°K produces no measurable change. It is concluded that the stability of close‐vacancy‐interstitial pairs against recombination is less in p type than in n‐type Ge. A qualitative argument as to the origin of this difference in stability is presented.Keywords
This publication has 4 references indexed in Scilit:
- Thermal and Radiation Annealing of GePhysical Review Letters, 1959
- Alpha-Particle Irradiation of Ge at 4.2°KPhysical Review B, 1958
- Low-Temperature Irradiation of n-Type GermaniumJournal of Applied Physics, 1958
- The Low Temperature Characteristics of Carbon-Composition ThermometersReview of Scientific Instruments, 1952