Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
- 3 January 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (1), 121-123
- https://doi.org/10.1063/1.125676
Abstract
A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metalorganic chemical vapor deposition. The two-dimensional electron gas mobility as high as 9260 cm2/V s with the sheet carrier density was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length 2.1 μm at 25 °C. At an elevated temperature of 350 °C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively.
Keywords
This publication has 6 references indexed in Scilit:
- Characteristics of a GaN Metal Semiconductor Field-Effect Transistor Grown on a Sapphire Substrate by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1999
- High Al-content AlGaN/GaN MODFETs for ultrahigh performanceIEEE Electron Device Letters, 1998
- Recessed gate GaN MODFETsSolid-State Electronics, 1997
- GaN FETs for microwave and high-temperature applicationsSolid-State Electronics, 1997
- Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substratesApplied Physics Letters, 1996
- Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistorsIEEE Electron Device Letters, 1996