Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

Abstract

In this work, we report on the growth,fabrication, and device characterization of wide-band-gap heterojunctionlight-emitting diodes based on the n- ZnO /p- GaN material system. The layer structure is achieved by first growing a Mg-doped GaNfilm of thickness 1 μm on Al 2 O 3 (0001) by molecular-beam epitaxy, then by growing Ga-doped ZnOfilm of thickness 1 μm by chemical vapor deposition on the p- GaN layer. Room-temperature electroluminescence in the blue-violet region with peak wavelength 430 nm is observed from this structure under forward bias. Light–current characteristics of these light-emitting diodes are reported, and a superlinear behavior in the low current range with a slope 1.9 and a sublinear behavior with a slope 0.85 in the high current range are observed.