Nitrogen reaction at a silicon–silicon dioxide interface
- 1 August 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (3), 150-152
- https://doi.org/10.1063/1.88389
Abstract
Evidence is provided indicating that a nitridation reaction occurs at a silicon–silicon dioxide interface during high‐temperature annealing in nitrogen. The factors affecting nitrogen‐reaction kinetics are similar to those affecting oxidation of silicon with dry oxygen. The nitridation reaction is significantly slower than the oxidation reaction, and trace amounts of oxidants can effectively compete with nitrogen for silicon reaction sites.Keywords
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