Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x-ray photoelectron spectroscopy
- 18 December 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (25), 2640-2642
- https://doi.org/10.1063/1.102299
Abstract
The interface between near stoichiometric hydrogenated amorphous silicon nitride (a-SiNx :H) deposited on hydrogenated amorphous silicon (a-Si:H) is studied using x-ray photoelectron spectroscopy as a function of the electron escape angle. This method allows the study of a-SiNx :H overlayers of about 40 Å thickness which is typical of the thicknesses used for well and barrier layers in superlattices and quantum well structures. Within the instrument’s resolution, subnitride components constitute less than 1% of the interface bonds. It is therefore concluded that the interface is atomically abruptKeywords
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