Cathodoluminescence degradation signatures of AlGaAs-based high-power laser arrays
- 24 February 2005
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 202 (4), 625-630
- https://doi.org/10.1002/pssa.200460452
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Industrial applications of high power diode lasers in materials processingApplied Surface Science, 2003
- Failure mode analysis of high-power laser diodesPublished by SPIE-Intl Soc Optical Eng ,2002
- A brief history of high-power semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 2000
- Facet degradation of high-power diode laser arraysApplied Physics A, 2000
- Thermal rollover characteristics up to 150/spl deg/C of buried-stripe type 980-nm laser diodes with a current injection window delineated by a SiNx layerIEEE Photonics Technology Letters, 2000
- High Power Operations of 980 nm Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs Pump Lasers Prepared by Multi-step Metalorganic Vapor Phase Epitaxial Growth with Ion Implanted ChannelsJapanese Journal of Applied Physics, 1999
- Stable operation of InGaAs/InGaP/AlGaAs ( = 1020 nm) laser diodesElectronics Letters, 1997
- Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasersJournal of Applied Physics, 1988
- Catastrophic damage of AlxGa1−xAs double-heterostructure laser materialJournal of Applied Physics, 1979
- Recombination enhanced defect reactionsSolid-State Electronics, 1978