Improving the large-signal models of bipolar transistors by dividing the intrinsic base into two lateral sections

Abstract

In large-signal transistor models, the lateral voltage drop across the base region is usually represented by a single-lump constant base spreading resistance. The letter demonstrates, for the switching mode, that a much better approximation of the 2-dimensional transistor can already be achieved by dividing the intrinsic base into merely two sections (2-section model).