Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel
- 1 May 1973
- journal article
- Published by Springer Science and Business Media LLC in Journal of Electronic Materials
- Vol. 2 (2), 359-372
- https://doi.org/10.1007/bf02666163
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Epitaxially grown AlN and its optical band gapJournal of Applied Physics, 1973
- Low-loss epitaxial ZnO optical waveguidesApplied Physics Letters, 1972
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- Evaluation of new single crystal piezoelectric materials for surface acoustic-wave applicationsUltrasonics, 1970
- EPITAXIAL ZnO ON SAPPHIREApplied Physics Letters, 1970
- Heteroepitaxial GaAs on aluminum oxide. I: Early growth studiesMetallurgical Transactions, 1970
- The Generation and Propagation of Acoustic Surface Waves at Microwave FrequenciesIEEE Transactions on Microwave Theory and Techniques, 1969
- Preparation and Structural Properties of GaN Thin FilmsJournal of Vacuum Science and Technology, 1969
- Growth Characteristics of AlN Films Pyrolytically Deposited on SiJournal of Applied Physics, 1968
- On the preparation, optical properties and electrical behaviour of aluminium nitrideJournal of Physics and Chemistry of Solids, 1967