THE INTRODUCTION OF CHARGE IN SiO2 AND THE INCREASE OF INTERFACE STATES DURING BREAKDOWN OF EMITTER-BASE JUNCTION OF GATED TRANSISTORS
- 15 October 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (8), 270-272
- https://doi.org/10.1063/1.1652996
Abstract
The increase (degradation) of the base current after breakdown of emitter‐base junction was studied on silicon planar NPN transistors, with a field electrode (gate) on top of the emitter‐base junction. We found that breakdown with a gate voltage positive with respect to the base gave rise to negative charge in the oxide. The place of the maximum in the degraded base current vs gate voltage is shown to be a strong function of the reverse current density.Keywords
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