Spiky diamond field emitters
- 30 November 2003
- journal article
- Published by Elsevier BV in Diamond and Related Materials
- Vol. 12 (10-11), 1681-1684
- https://doi.org/10.1016/s0925-9635(03)00257-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Smooth and high-rate reactive ion etching of diamondDiamond and Related Materials, 2002
- Field emission property of chemical vapor deposited diamond overlayer filmsDiamond and Related Materials, 2002
- Growth of homoepitaxial diamond doped with nitrogen for electron emitterDiamond and Related Materials, 2002
- Electronic properties of the emission sites of low-field emitting diamond filmsDiamond and Related Materials, 2000
- Homoepitaxial growth on fine columns of single crystal diamond for a field emitterDiamond and Related Materials, 2000
- Emission current influence of gated structure and diamond emitter morphologies in triode-type field emission arraysDiamond and Related Materials, 2000
- Laser-induced modification of electron field emission from nanocrystalline diamond filmsJournal of Applied Physics, 1999
- Characterization of electron emission from N-doped diamond using simultaneous field emission and photoemission techniqueApplied Surface Science, 1999
- Field emission characteristics of phosphorus-doped homoepitaxial diamond filmsApplied Surface Science, 1999
- Highly-efficient flat electron emitter of single-crystalline CVD diamondDiamond and Related Materials, 1999