High performance of high-voltage 4H-SiC Schottky barrier diodes
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (6), 280-282
- https://doi.org/10.1109/55.790735
Abstract
High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes. A typical specific on-resistance (R/sub on/) of these devices was 1.4/spl times/10/sup 3/ /spl Omega/ cm/sup 3/ at 24/spl deg/C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R/sub on/'s lower than 6H-SiC based high-power rectifiers with the same breakdown voltage. As for Schottky contact metals, Au, Ni, and Ti were employed in this study. The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights.Keywords
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