Measurement of electrophysical properties of silicon carbide epitaxial films
- 30 November 1994
- journal article
- Published by Elsevier BV in Diamond and Related Materials
- Vol. 3 (11-12), 1393-1397
- https://doi.org/10.1016/0925-9635(94)90157-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Boron-related deep centers in 6H-SiCApplied Physics A, 1990
- Silicon carbide doped with galliumphysica status solidi (a), 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974