Phase-coherent transport in InN nanowires of various sizes
- 6 May 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 77 (20), 201301
- https://doi.org/10.1103/physrevb.77.201301
Abstract
We investigate phase-coherent transport in InN nanowires of various diameters and lengths. The nanowires were grown by means of plasma-assisted molecular beam epitaxy. Information on the phase-coherent transport is gained by analyzing the characteristic fluctuation pattern in the magnetoconductance. For a magnetic field oriented parallel to the wire axis, we found that the correlation field mainly depends on the wire cross section, while the fluctuation amplitude is governed by the wire length. In contrast, if the magnetic field is perpendicularly oriented, for wires longer than approximately , the correlation field is limited by the phase coherence length. Further insight into the orientation dependence of the correlation field is gained by measuring the conductance fluctuations at various tilt angles of the magnetic field.
Keywords
This publication has 27 references indexed in Scilit:
- Single electron pumping in InAs nanowire double quantum dotsApplied Physics Letters, 2007
- Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPEJournal of Crystal Growth, 2006
- Top-gate defined double quantum dots in InAs nanowiresApplied Physics Letters, 2006
- Semiconductor nanowiresJournal of Physics D: Applied Physics, 2006
- Nanowire-based one-dimensional electronicsMaterials Today, 2006
- Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility TransistorsNano Letters, 2006
- Vertical wrap-gated nanowire transistorsNanotechnology, 2006
- Tunable Double Quantum Dots in InAs Nanowires Defined by Local Gate ElectrodesNano Letters, 2005
- Single-electron tunneling in InP nanowiresApplied Physics Letters, 2003
- Nanowire resonant tunneling diodesApplied Physics Letters, 2002