Plasma-enhanced chemical vapor deposition of low-resistive tungsten thin films
- 25 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (8), 837-839
- https://doi.org/10.1063/1.104505
Abstract
Controlling the wafer temperatures from 200 to 500 °C at H2/WF6 flow ratio equal to 24, low-resistive (about 11 μΩ cm) tungsten thin films are deposited by plasma-enhanced chemical vapor deposition. The as-deposited tungsten films have (110), (200), and (211) oriented bcc structures and Auger depth profile shows that fluorine and oxygen impurities are below the detection limit of Auger electron spectroscopy.Keywords
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