CW room-temperature visible single quantum well Ga0.73Al0.27As diode lasers grown by metalorganic chemical vapour deposition

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Abstract
Room-temperature CW laser operation at 7125 Å has been achieved in a (Ga1−xAlxAs, x̃0.27) single quantum well double heterostructure (SQW-DH) diode laser. The laser consists of a 9 μm-wide delineated shallow proton stripe. The pulsed threshold current for a 250 μm long device is 115 mA whereas the CW threshold current is 140 mA. The CW external differential quantum efficiency is 60%.