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A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor
Home
Publications
A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor
A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor
NR
N. Ramungul
N. Ramungul
TC
T.P. Chow
T.P. Chow
MG
M. Ghezzo
M. Ghezzo
JK
J. Kretchmer
J. Kretchmer
WH
W. Hennessy
W. Hennessy
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23 December 2002
conference paper
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/drc.1996.546313
Abstract
No abstract available
Keywords
ELECTRON MOBILITY
WIDE BANDGAP SEMICONDUCTORS
HIGH VOLTAGE
WIDE BAND GAP SEMICONDUCTORS
LEAKAGE CURRENT
POWER TRANSISTORS
INSULATED GATE BIPOLAR TRANSISTOR
THERMAL CONDUCTIVITY
TEMPERATURE
Cited by 11 articles