Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers
- 7 October 2011
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 45 (10), 1378-1385
- https://doi.org/10.1134/s1063782611100162
Abstract
Radiative characteristics of semiconductor stripe-contact lasers operating under quenching conditions of Fabry-Perot-mode lasing are studied. It is found that reversible turning off of Fabry-Perot-mode lasing is caused by switching to closed-mode lasing. Radiative characteristics of the closed mode are controlled by the mode structure with the close-to-zero loss for radiation output, which covers the entire crystal. The main threshold conditions of closed-mode lasing are a decrease in interband absorption in the passive region and an increase in the modal gain of the closed-mode lasing line. It is shown that a decrease in interband absorption in the passive region can be provided by both spontaneous emission from the injection region and lasing-mode photons. An increase in the modal gain of the closed-mode lasing line is provided by shifting the energy minima of the conduction band and maxima of the valence band of the injection region with respect to the energy bands of the passive region.Keywords
This publication has 9 references indexed in Scilit:
- Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laserSemiconductors, 2011
- Temperature delocalization of charge carriers in semiconductor lasersSemiconductors, 2010
- Quenching of lasing in high power semiconductor laserSemiconductors, 2009
- 20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96μmPublished by SPIE-Intl Soc Optical Eng ,2009
- Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structureApplied Physics B Laser and Optics, 2008
- Anomalous dynamic characteristics of semiconductor quantum-dot lasers generating on two quantum statesTechnical Physics Letters, 2007
- High-power laser diodes based on asymmetric separate-confinement heterostructuresSemiconductors, 2005
- Ultralow internal optical loss in separate-confinement quantum-well laser heterostructuresSemiconductors, 2004
- High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructuresSemiconductors, 2002