Room-temperature CW operation of AlGaInP double-heterostructure visible lasers

1 January 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (20), 931-932
https://doi.org/10.1049/el:19850658

Abstract

Room-temperature continuous-wave (CW) operation of (Al_0.4Ga_0.6)_0.5In_0.5P/Ga_0.5In_0.5P/(Al_0.4Ga_0.6)_0.5In_0.5P double-heterostructure visible semiconductor lasers has been achieved for the first time. CW operation is obtained up to 50° C. The threshold current at 25° C is mA (4.1 kA/cm²). The lasing wavelength is 689.7 nm.

Keywords

689.7 NM LASING WAVELENGTH
DH TYPE
50°C
III-V SEMICONDUCTORS
DOUBLE-HETEROSTRUCTURE
CW OPERATION
35 MA THRESHOLD CURRENT
SEMICONDUCTOR LASERS
25°C
CONTINUOUS-WAVE
ROOM TEMPERATURE OPERATION
ALGAINP
VISIBLE LASERS
(AL0.4GA0.6)0.5IN0.5P/GA0.5IN0.5P/(AL0.6GA0.6)0.5IN0.5P
LOW-PRESSURE MOCVD

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