Single, individual traps in MOSFETs
- 1 January 1991
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. T35, 273-280
- https://doi.org/10.1088/0031-8949/1991/t35/054
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Individual defects at the Si:SiO2interfaceSemiconductor Science and Technology, 1989
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- Deep level transient spectroscopy on single, isolated interface traps in field-effect transistorsApplied Physics Letters, 1988
- 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistorsApplied Physics Letters, 1985
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984
- Interface states at the SiO2-Si interfaceSurface Science, 1983
- Transient capacitance measurements of interface states on the intentionally contaminated Si-SiO2 interfaceApplied Physics A, 1979
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952