Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O
- 6 March 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (10), 101910
- https://doi.org/10.1063/1.2183809
Abstract
We investigated the optical properties of before and after atomic hydrogen irradiation. Oxygen incorporation gives rise to energy levels associated with single O atoms, O–O pairs, and O clusters, and to a blueshift of the energy gap of the material with respect to that of pure . All of these effects disappear progressively after irradiation with H, which also leads to an increase in the tensile strain of the epilayer. These observations provide experimental evidence of H-induced passivation of an isoelectronic impurity in II–VI alloys.
Keywords
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