Improved circuit technique to reduce h/sub fe/ degradation in bipolar output drivers
- 1 March 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (3), 573-574
- https://doi.org/10.1109/16.368058
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- High fan-in circuit designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A new BiCMOS gate array cell with diode connected bipolar driverPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Degradation of gain in bipolar transistorsIEEE Transactions on Electron Devices, 1994
- Modeling hot-carrier effects in polysilicon emitter bipolar transistorsIEEE Transactions on Electron Devices, 1988
- hFEdegradation due to reverse bias emitter-base junction stressIEEE Transactions on Electron Devices, 1969