Effect of hydrogen on the electronic properties of InxGa1−xAs1−yNy/GaAs quantum wells

Abstract

Atomic hydrogen irradiation leads to striking effects on the electronic properties of ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}{\mathrm{As}}_{1-y}{\mathrm{N}}_y/\mathrm{GaAs}$ single quantum wells as measured by photoluminescence spectroscopy. The ${\mathrm{In}}_x{\mathrm{Ga}}_{1-x}{\mathrm{As}}_{1-y}{\mathrm{N}}_y$ band-gap energy blueshifts with increasing hydrogen dose and finally saturates at the value of a corresponding reference sample without nitrogen. The luminescence intensity decreases upon hydrogen irradiation with a strong dependence on nitrogen content. The above results have been found in a large set of samples differing for nitrogen and indium content, and are related to the formation of bonds between hydrogen and one or more nitrogen atoms.