Substitution-induced midgap states in the mixed oxides with R=Y, La, and Nd
- 1 July 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (1), 562-568
- https://doi.org/10.1103/physrevb.48.562
Abstract
Changes induced in the electronic structure of by substitutions of R=Y, La, or Nd for Ba to form the mixed oxides have been investigated using ultraviolet photoelectron spectroscopy. Substitution of formally ions for leads to the introduction of filled states in the band gap that are shown by resonant-photoemission measurements to have significant Ti 3d character, consistent with a Mott-Hubbard-insulator description for these oxides. Various contributions to the binding energy and width of these states are considered. It is suggested that the dominant factor is electron-electron correlation and this leads to the estimates U∼Δ∼3 eV for this system, where U is the correlation energy for the 3d electrons and Δ is the charge-transfer energy.
Keywords
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