Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
- 15 June 2008
- journal article
- Published by Springer Science and Business Media LLC in Nature Physics
- Vol. 4 (8), 656-661
- https://doi.org/10.1038/nphys994
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Charge State Control and Relaxation in an Atomically Doped Silicon DeviceNano Letters, 2007
- Realization of Atomically Controlled Dopant Devices in SiliconSmall, 2007
- Electrical detection of coherent 31P spin quantum statesNature Physics, 2006
- Phosphorus Donors in Highly Strained SiliconPhysical Review Letters, 2006
- Two-dimensional architectures for donor-based quantum computingPhysical Review B, 2006
- Enhancing semiconductor device performance using ordered dopant arraysNature, 2005
- Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ionsApplied Physics Letters, 2005
- Charge-based quantum computing using single donors in semiconductorsPhysical Review B, 2004
- Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructuresPhysical Review A, 2000
- A silicon-based nuclear spin quantum computerNature, 1998