Reply to “Comment on ‘Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices’”
- 14 May 2013
- journal article
- editorial
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 117 (22), 11881-11882
- https://doi.org/10.1021/jp401828m
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Comment on “Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices”The Journal of Physical Chemistry C, 2013
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- Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory DevicesThe Journal of Physical Chemistry C, 2012
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- Observation of conducting filament growth in nanoscale resistive memoriesNature Communications, 2012
- In Situ Observation of Voltage‐Induced Multilevel Resistive Switching in Solid Electrolyte MemoryAdvanced Materials, 2011
- Forming and switching mechanisms of a cation-migration-based oxide resistive memoryNanotechnology, 2010