Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD
- 1 January 2014
- journal article
- Published by Elsevier BV in Materials Letters
- Vol. 114, 26-28
- https://doi.org/10.1016/j.matlet.2013.09.096
Abstract
No abstract availableFunding Information
- National Key Basic Research Program of China (2011CB301901)
- National Natural Science Foundation of China (61322406, 61274038, 61204070, 51072195, 51072196)
- National High-tech R&D Program (2011AA03A111)
This publication has 14 references indexed in Scilit:
- High-brightness polarized light-emitting diodesLight: Science & Applications, 2012
- The influence of thickness and ammonia flow rate on the properties of AlN layersMaterials Science in Semiconductor Processing, 2012
- Novel Solution Growth Method of Bulk AlN Using Al and Li$_{3}$N Solid SourcesApplied Physics Express, 2011
- Growth conditions and surface morphology of AlN MOVPEJournal of Crystal Growth, 2008
- Heteroepitaxy of AlGaN on bulk AlN substrates for deep ultraviolet light emitting diodesApplied Physics Letters, 2007
- Ultraviolet semiconductor laser diodes on bulk AlNJournal of Applied Physics, 2007
- High quality AlGaN solar-blind Schottky photodiodes fabricated on AIN/sapphire templateApplied Physics Letters, 2007
- Influence of Al∕N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxyApplied Physics Letters, 2005
- AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlNApplied Physics Letters, 2003
- Seeded growth of AlN bulk single crystals by sublimationJournal of Crystal Growth, 2002