Investigation of the dynamic on-state resistance of 600V normally-off and normally-on GaN HEMTs
- 1 September 2015
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this paper, current collapse phenomena and thermal effects in newly developed normally-off and normally-on GaN HEMTs are investigated. The experimental results show that a high off-state voltage and high switched drain current at high junction temperature cause an increase of the on-state resistance. During switching from 50 kHz to 400 kHz, an increase of R DSON is observed for both types of GaN devices. It is evident that the number of switching transients significantly influences the increase of the on-state resistance, suggesting that this increase is due to a current collapse in GaN HEMTs. A detailed comparison of the evaluated R DSON between GaN transistors and the newest high-speed CoolMOS-C7 transistor is presented.Keywords
This publication has 7 references indexed in Scilit:
- High-voltage normally OFF GaN power transistors on SiC and Si substratesMRS Bulletin, 2015
- Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTsIEEE Electron Device Letters, 2013
- GaN-Based Power HEMTs: Parasitic, Reliability and High Field IssuesECS Transactions, 2013
- Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect TransistorsIEEE Transactions on Electron Devices, 2013
- Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load ConverterIEEE Transactions on Power Electronics, 2013
- Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC SubstratesIEEE Transactions on Electron Devices, 2013
- Gallium Nitride power HEMT for high switching frequency power electronicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007