Excited-state spectroscopy of single Pt atoms in Si

11 November 2008

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 78 (19), 195309
https://doi.org/10.1103/physrevb.78.195309

Abstract

Resonant peaks superimposed on the direct tunneling current in the low-temperature transport of Schottky barrier metal-oxide-semiconductor field-effect transistor inversion layers are investigated. The resonances are attributed to single Pt atoms that have diffused from the metallic contacts into the depletion width near the metal/semiconductor interface. Excited-state spectroscopy and magnetic fields are used to identify different levels. A double donor level in a singlet state and another level that is attributed to a triple donor state are observed.

Keywords

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