Epitaxial PLZT(x/0/100) thin films were successfully grown on c-plane sapphire substrates. Their dielectric and electrooptic properties were measured for the first time. The ferroelectricity was observed for the films of x≤28 composition. The PLZT(28/0/100) thin film had strong electro-optic effect and this will be one of most useful candidates for making thin film integrated optic devices.