Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (2), 477-499
- https://doi.org/10.1109/3.283797
Abstract
No abstract availableKeywords
This publication has 143 references indexed in Scilit:
- Strained-layer InGaAs(P) quantum well semiconductor lasers and semiconductor laser amplifiersPhilips Journal of Research, 1995
- Temperature sensitivity and high temperature operation of long wavelength semiconductor lasersApplied Physics Letters, 1993
- Strained multiquantum-well corrugation-pitch-modulated distributed feedback laser with ultranarrow (3.6 kHz) spectral linewidthElectronics Letters, 1993
- Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasersMicroelectronic Engineering, 1992
- InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxyJournal of Crystal Growth, 1992
- Logarithmic gain/current-density characteristic of InGaAs/InGaAlAs/InP multi-quantum-well separate-confinement-heterostructure lasersElectronics Letters, 1991
- Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InPApplied Physics Letters, 1989
- The band-band Auger effect in semiconductorsSolid-State Electronics, 1987
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982