Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs
- 15 December 2010
- journal article
- Published by Elsevier BV in Materials Science and Engineering B
- Vol. 175 (3), 213-216
- https://doi.org/10.1016/j.mseb.2010.07.030
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Microstructure of eutectic 80Au/20Sn solder joint in laser diode packageMicroelectronic Engineering, 2008
- Stress relaxation in GaN by transfer bonding on Si substratesApplied Physics Letters, 2007
- Investigation of interfacial reaction between Au–Sn solder and Kovar for hermetic sealing applicationMicroelectronic Engineering, 2007
- Au–Sn flip-chip solder bump for microelectronic and optoelectronic applicationsMicrosystem Technologies, 2006
- Au/Sn solder for face-down bonding of AlGaAs/GaAs ridge waveguide laser diodesMaterials Letters, 2004
- Study of GaN light-emitting diodes fabricated by laser lift-off techniqueJournal of Applied Physics, 2004
- Increase in the extraction efficiency of GaN-based light-emitting diodes via surface rougheningApplied Physics Letters, 2004
- Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgyIEEE Transactions on Advanced Packaging, 2001
- Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-offJournal of Electronic Materials, 1999
- Calculation of surface tension and wetting properties of Sn-Based solder alloysScripta Materialia, 1999