Misfit dislocations in annealed Si1−xGex/Si heterostructures
- 30 December 1989
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 183 (1-2), 133-139
- https://doi.org/10.1016/0040-6090(89)90438-0
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness valuesJournal of Crystal Growth, 1989
- Dislocation nucleation and propagation in Si0.95Ge0.05 layers on siliconApplied Physics Letters, 1989
- New Source of Dislocations inStrained Epitaxial LayersPhysical Review Letters, 1989
- Dependence of critical thickness on growth temperature in GexSi1−x/Si superlatticesApplied Physics Letters, 1988
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxyApplied Physics Letters, 1987
- Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)Journal of Applied Physics, 1984
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Messung von Versetzungsgeschwindigkeiten in GermaniumPhysica Status Solidi (b), 1967
- Crystal Interfaces. Part II. Finite OvergrowthsJournal of Applied Physics, 1963