CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

Abstract

We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors. The process starts from a 150-mm GaN-on-Si substrate with an embedded Si ₃ N ₄ /Al ₂ O ₃ bilayer gate dielectric, encapsulated by a high-temperature low-pressure chemical vapor deposited nitride layer. Power devices with a 20-mm gate width reach a maximum output current of 8 A, a breakdown voltage of 750 V, and a specific on-resistance R _{on, sp} of 2.9 mΩ·cm ² . The off-state drain leakage at 600 V is 7 μA. We show robust gate dielectrics with a large gate bias swing.