BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas
- 1 January 2007
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 298, 316-319
- https://doi.org/10.1016/j.jcrysgro.2006.10.072
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxyJournal of Crystal Growth, 2000
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and BoronJapanese Journal of Applied Physics, 1993
- Very uniform epitaxyProgress in Crystal Growth and Characterization, 1989