Plasmonic device in silicon CMOS

Abstract

The first plasmonic device integrated in Si CMOS, a C-shaped nanoaperture photodetector with a small feature size of 40 nm is presented. The photocurrent polarisation dependence of the C aperture detector is direct evidence of an antenna effect in the blue wavelength range. In contrast, there is no evident polarisation dependence for the square aperture detector with the same physical area. The photocurrent density of a CMOS detector is enhanced three times with the C-shaped nanoaperture.