Total dose failures in advanced electronics from single ions
Open Access
- 1 December 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 40 (6), 1820-1830
- https://doi.org/10.1109/23.273474
Abstract
No abstract availableThis publication has 57 references indexed in Scilit:
- A 17-ns 4-Mb CMOS DRAMIEEE Journal of Solid-State Circuits, 1991
- A 25-ns 1-Mbit CMOS SRAM with loading-free bit linesIEEE Journal of Solid-State Circuits, 1987
- Recombination along the tracks of heavy charged particles in SiO2 filmsJournal of Applied Physics, 1985
- Hole Removal in Thin-Gate MOSFETs by TunnelingIEEE Transactions on Nuclear Science, 1985
- Proton and Heavy-Ion Radiation Damage Studies in MOS TransistorsIEEE Transactions on Nuclear Science, 1985
- Radiation Effects in MOS Capacitors with Very Thin Oxides at 80degKIEEE Transactions on Nuclear Science, 1984
- Electron−hole pair creation energy in SiO2Applied Physics Letters, 1975
- Effects of ionizing radiation on thin-oxide (20–1500 Å) MOS capacitorsJournal of Applied Physics, 1974
- Effect of gamma-ray irradiation on the surface states of MOS tunnel junctionsJournal of Applied Physics, 1974
- XLI. On the recombination of ions in air and other gasesThe London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, 1906