Temperature dependence of luminescence spectra related to free carrier and exciton recombination in GaAs quantum wells
- 1 September 1997
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 56 (3), 308-314
- https://doi.org/10.1088/0031-8949/56/3/015
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Exciton dynamics in GaAs quantum wells under resonant excitationPhysical Review B, 1994
- Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlatticesAdvances in Physics, 1991
- Dynamics of Carrier Recombination in GaAs/AlGaAs Quantum Well StructuresPhysica Scripta, 1991
- Thermal ionization of excitons in GaAs/AlGaAs quantum well structuresJournal of Applied Physics, 1990
- Photoluminescence in quantum well and bulk GaAs: a direct comparative studyIl Nuovo Cimento D, 1988
- Chapter 1 Fundamental Properties of III-V Semiconductor Two-Dimensional Quantized Structures: The Basis for Optical and Electronic Device ApplicationsPublished by Elsevier BV ,1987
- Luminescence linewidths of excitons in GaAs quantum wells below 150 KPhysical Review B, 1986
- Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1984
- Free excitons in room-temperature photoluminescence of GaAs-multiple quantum wellsPhysical Review B, 1983
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980