Specific site location of S and Si in ion-implanted GaAs
- 15 May 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (10), 880-882
- https://doi.org/10.1063/1.93773
Abstract
Rutherford backscattering and proton induced x-ray emission in combination with channeling have been used to investigate the specific site location of S and Si implanted in GaAs through the asymmetry in their channeling dips. A pronounced asymmetry is observed for 〈110〉 scans parallel to the {11̄0} plane in the case of S, whereas no such asymmetry is found for the case of Si. These results clearly indicate that S predominantly occupies one sublattice site which is shown to be the As site whereas Si occupies both Ga and As sites in about equal concentrations.Keywords
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