Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
- 1 January 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (1), 362-366
- https://doi.org/10.1116/1.589811
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Quantitative two-dimensional dopant profiles obtained directly from secondary electron imagesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Field-emission SEM imaging of compositional and doping layer semiconductor superlatticesUltramicroscopy, 1995
- Methods for the measurement of two-dimensional doping profilesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992