A Soft Error Rate Model for MOS Dynamic RAM's
- 1 April 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (2), 362-367
- https://doi.org/10.1109/jssc.1982.1051742
Abstract
A soft error rate analysis model for MOS dynamic RAM's is presented. The soft error rate can be quantitatively calculated by using a solution of the equations for diffusion and collection of alpha-particle-induced excess electrons and by combining a statistical treatment of alpha particle energy, incidence angles, and incidence positions with the noise charge calculation. The model is then applied to analyze a soft error experiment on 64-kbit dynamic RAM's. It is shown that soft error characteristics with regard to signal charge (critical charge), as well as alpha energy and incidence angle dependencies, can be definitely determined. The model can also be used to predict the location of soft errors in MOS dynamic RAM's.Keywords
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