Substantiation of subplantation model for diamondlike film growth by atomic force microscopy

Abstract

Atomic force microscopy studies of films deposited from ${\mathrm{C}}^{+}$ ions are reported. For ${\mathit{C}}^{+}$ energies E≥30 eV the films are diamondlike and retain the initial smoothness of the silicon substrate. For E${\mathrm{C}}^{+}$ energy. It was further found that for 120 eV ${\mathrm{C}}^{+}$ deposition, at substrate temperatures ${\mathit{T}}_{\mathit{s}}$${\mathit{T}}_{\mathit{s}}$>150 °C graphitic, rough films are produced. The results substantiate the subplantation model, manifesting the role of subsurface internal growth in diamondlike film formation.