Influence of local thermal dissipation on electromigration in an Al thin-film line
- 1 October 2016
- journal article
- Published by Elsevier BV in Microelectronics Reliability
- Vol. 65, 178-183
- https://doi.org/10.1016/j.microrel.2016.08.002
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science (26289001, 26820001)
This publication has 13 references indexed in Scilit:
- Electromigration in ULSI interconnectsMaterials Science and Engineering: R: Reports, 2007
- Electromigration Failure of Metal LinesInternational Journal of Fracture, 2006
- Recent advances on electromigration in very-large-scale-integration of interconnectsJournal of Applied Physics, 2003
- Voiding induced stress redistribution and its reliability implications in metal interconnectsActa Materialia, 2000
- On the prediction of electromigration voiding using stress-based modelingJournal of Applied Physics, 2000
- Electromigration proximity effects of two neighboring fast-diffusion segments in single-crystal aluminum linesJournal of Applied Physics, 1999
- Electromigration in single-crystal aluminum lines with fast diffusion paths made by nanoindentationActa Materialia, 1998
- Electromigration: A reviewMicroelectronics Reliability, 1997
- Electromigration and related failure mechanisms in integrated circuit interconnectsInternational Materials Reviews, 1994
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961