Acceptor dopants in silicon molecular-beam epitaxy
- 1 August 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (8), 3395-3399
- https://doi.org/10.1063/1.324181
Abstract
Epitaxial silicon films have been grown on single‐crystal Si (100) substrates by evaporation from an e‐gun source in ultrahigh vacuum and have been doped with gallium and with aluminum from separate oven sources. Gallium doping profiles have been controlled accurately for substrate temperatures in the range 600–800 °C and for carrier densities in the range 1014–5×1017 cm−3. Examples are given of abrupt changes in doping level. Measured drift mobilities in the films are within 15% of values for bulk silicon. Crystallographic properties of the films are comparable to those of the substrates and are suitable for device applications. Films doped with aluminum exhibit comparable electrical and crystallographic properties, but good control of the doping profile has not been achieved for the range of parameters studied.Keywords
This publication has 16 references indexed in Scilit:
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977
- Operation of a cryopumped UHV systemJournal of Vacuum Science and Technology, 1977
- Antimony Concentration in Silicon Epitaxial Layer Formed by Partially Ionized Vapor DepositionJapanese Journal of Applied Physics, 1976
- Determination of diffusion, partition and sticking coefficients for boron, phosphorus and antimony in siliconSolid-State Electronics, 1975
- The growth and structure of semiconducting thin filmsReports on Progress in Physics, 1974
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972
- Influence of impurities on the surface structures and fault generation in homoepitaxial Si (111) filmsSurface Science, 1971
- Low-temperature epitaxial growth of doped silicon films and junctionsSolid-State Electronics, 1969
- STUDY OF THE EARLY STAGES OF THE EPITAXY OF SILICON ON SILICONApplied Physics Letters, 1966