Chemical Interactions Among Defects in Germanium and Silicon
- 1 May 1956
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 35 (3), 535-636
- https://doi.org/10.1002/j.1538-7305.1956.tb02393.x
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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- Mobility of Impurity Ions in Germanium and SiliconPhysical Review B, 1954
- Ionization Energies of Groups III and V Elements in GermaniumPhysical Review B, 1954
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Chemical Effects Due to the Ionization of Impurities in SemiconductorsThe Journal of Chemical Physics, 1953
- Diffusion of Lithium into Germanium and SiliconPhysical Review B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Distribution of ions in electrolytic solutionsTransactions of the Faraday Society, 1934
- Measurements of the Dielectric Constants of Conducting MediaPhysical Review B, 1930