Profiling hydrogen in materials using ion beams
- 1 March 1978
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods
- Vol. 149 (1-3), 19-39
- https://doi.org/10.1016/0029-554x(78)90834-0
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Enhanced hydrogen trapping due to He ion damageJournal of Nuclear Materials, 1976
- New precision technique for measuring the concentration versus depth of hydrogen in solidsApplied Physics Letters, 1976
- Range profiles of 6–16-keV hydrogen ions implanted in metal oxidesJournal of Applied Physics, 1976
- Profile studies of hydrogen trapping in metals due to ion damageApplied Physics Letters, 1976
- Hydrogen implantation in silicon between 1.5 and 60 kevRadiation Effects, 1976
- Depth distribution profiling of deuterium and 3HeJournal of Nuclear Materials, 1974
- Depth profiling ofandin solids using theresonancePhysical Review B, 1974
- A NEW utilization of11B ion beams: Hydrogen analysis by1H11B,α)α α nuclear reactionRadiation Effects, 1974
- A technique for measuring hydrogen concentration versus depth in solid samplesNuclear Instruments and Methods, 1973
- Angular Distribution of the Reactionbetween 240 kev and 3.56 MevPhysical Review B, 1953